代表性SCI论文如下: 1.Xurong Zhao, Sumei Wang*, Aiju Li, Jun Ouyang, Guodong Xia, and Ji Zhou. Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors. RSC Advance, 2014, 4,14890-14895。(通讯作者,SCI收录,IF=3.708) 2. Guodong Xia, Sumei Wang*, Xurong Zhao and Limin Zhou. High-Performance Low-Voltage Organic Transistor Memories with Room-Temperature Solution-Processed Hybrid Nanolayer Dielectrics. J. Mater. Chem. C, 2013,1, 3291-3296. (通讯作者,SCI收录,IF=6.626) 3. Sumei Wang, Paddy K. L. Chan, Chi Wah Leung, Xurong Zhao. Controlled performance of an organic transistor memory device with an ultrathin LiF blocking layer. RSC Adv., 2012, 2 (24), 9100 - 9105. (SCI收录,IF=3.708) 4. S.M. Wang, C.W. Leung and P. K. L. Chan. Enhanced Memory Effect in Organic Transistor by Sandwiched Silver Nanoparticles. Organic Electronics. 2010 (11), 990-995. 3.676 (SCI,IF=3.676) 5. S. M. Wang, C. W. Leung and P. K. L. Chan. Nonvolatile organic transistor-memory devices using various thicknesses of silver nanoparticle layer. Applied Physics Letters. 2010, 97, 023511. (SCI,IF=3.515) 代表性发明专利如下: 1. 国家发明专利:一种直接合成硫化铅立方体纳米颗粒薄膜的方法,王素梅,赵旭荣。授权专利号:ZL201310041972.0 2. 国家发明专利:一种硫化锌半导体薄膜的简单高效制备方法,夏国栋,王素梅。授权专利号:ZL 201410179670.4 3. 国家发明专利:大规模直接合成高导电率硫化镍二维纳米片阵列的方法。夏国栋,王素梅。专利号:ZL 201310452037.3 4. 国家发明专利:一种碳包覆氧化铁/金属银及其简单合成方法。夏国栋,王素梅,刘刚,陈力。专利号:2015101840612 5. 国家发明专利:一种碳包覆氧化锌及其高效合成方法。夏国栋,田晓辉,王素梅,王岩。专利号:2015101840631 |